GaN基紫外探测器及其研究进展  

GaN based ultraviolet detectors and its recent development

作　　者：李向阳[1] 许金通[1] 汤英文[1] 李雪[1] 张燕[1] 龚海梅[1] 赵德刚[2] 杨辉[2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院半导体研究所,北京100083

出　　处：《红外与激光工程》2006年第3期276-280,共5页Infrared and Laser Engineering

摘　　要：宽禁带半导体材料的研究和突破,带动了各种器件的发展和应用。GaN基紫外探测器具有通过调整材料的配比可以调节器件响应的截止波长的优点,可以制备日盲型紫外探测器。对GaN基宽禁带紫外探测器材料体系的研究进展进行了回顾,重点介绍了p型材料的制备、金属半导体接触、材料的蚀刻等。最后,对国内外近期的紫外探测器特别是紫外焦平面器件的研究进展及初步获得的32×32紫外焦平面探测器进行了简单介绍。Along with breakthrough in high quality GaN based wide gap semiconductor material, various new devices appeared. Among them,ultraviolet （UV） detector was mostly concerned, because of their solar-blind ability. Review was made on GaN based wide gap semiconductor material and devices,especially for p-type material manufacture,metal -semiconductor contact, material etching, etc.Recent development of ultraviolet detectors was also introduced, including the GaN based focal plane array （FPA） and the performance of 32×32 UV FPA obtained recently.

关 键 词：紫外探测器 氮化镓 铝镓氮 紫外焦平面器件 

分 类 号：TN23[电子电信—物理电子学]