在磁场作用下氮化物抛物量子阱中杂质态能量  

Impurity Energy Level of Nitride Parabolic Quantum Wells with Magnetic Filed

作　　者：萨茹拉[1] 关玉琴[2] 

机构地区：[1]内蒙古师范大学物理与电子信息学院,内蒙古呼和浩特010022 [2]内蒙古工业大学理学院,内蒙古呼和浩特010051

出　　处：《光电子．激光》2006年第7期891-894,共4页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金资助项目(10364003);内蒙古师范大学青年科研基金资助项目(QN004032)

摘　　要：采用变分法研究了在外磁场作用下GaN/AlxGa1-xN无限抛物量子阱(PQW)中类氢杂质态能级,给出不同磁场下杂质态基态能、结合能随阱宽的变化关系以及能量随磁场强度变化的函数关系。数值结果表明:外磁场对类氢杂质能量和结合能均有明显的影响,杂质态能量随磁场的增强而显著增大,并且随阱宽的增大而增大;GaN/Al0.3Ga0.7N PQW对杂质态的束缚程度比GaAs/Al0.3Ga0.7As PQW强。The energy of a hydrogenic impurity in GaN/AlxGa1-x N compositional parabolic quantum well （PQW） is investigated by variational method. The ground state, the binding energy of hydrogenic impurity as a function of the well width and the energy of hydrogenic impurity as a function of the magnetic field are given. The numerical results indicate that the influence of external magnetic field on the ground state and the binding energy of a hydrogenic impurity is obvious,and the influence increases with increasing well width. The bound degree of the GaN/Al0.3 Ga0.7 N PQW to the hydrogenic impurity is stronger than that of the GaAs/Al0.3Ga0.7As PQW.

关 键 词：氮化物抛物量子阱(PQW) 类氢杂质态 外磁场 能量 

分 类 号：O471.1[理学—半导体物理]