磁控溅射氮分压对Nb-Si-N薄膜结构和性能的影响  

The Effect of N_2 Partial Pressure on the Microstructure and Properties of Nb-Si-N Films

作　　者：王剑锋[1] 宋忠孝[2] 徐可为[1] 范多旺[3] 

机构地区：[1]西安交通大学金属材料强度国家重点实验室,陕西西安710049 [2]西安交通大学电子物理与器件教育部重点实验室,陕西西安710049 [3]兰州交通大学光电技术与智能控制教育部重点实验室,兰州甘肃730070

出　　处：《稀有金属材料与工程》2006年第6期978-981,共4页Rare Metal Materials and Engineering

基　　金：国家重点基础研究发展计划"973"项目(004CB619302);国家自然科学基金(NSFC)(50471035);光电技术与智能控制教育部重点实验室(兰州交通大学)开放基金资助项目(K040119)

摘　　要：用反应磁控溅射法在不同的氮分压下沉积了Nb-Si-N薄膜。结果表明:Nb-Si-N膜的成分、结构和性能随氮分压的改变而不同。随氮分压的增加,Nb-Si-N膜的Nb/Si比和表面粗糙度减小;薄膜的电阻值和微硬度增加。Nb-Si-N膜的结构为纳米晶NbN与类似Si3N4非晶相组成的纳米复合结构,且随着氮分压的增加,Nb-Si-N膜的非晶倾向增强,晶粒尺寸减小。The Nb-Si-N films were deposited by reactive magnetron sputtering with different N2 partial pressures. The result showed that the composition, microstructure and properties of the Nb-Si-N films depend strongly on the N2 partial pressure. As the N2 partial pressure increasing, the Nb/Si ratio and the surface roughness decease, but the bulk resistance and microhardness of the Nb-Si-N films increase. The microstructure of Nb-Si-N films is a nano-composite structure consisting of nano-sized NbN crystallites and amorphous Si3N4-like compound of Si-N. With the increase of N2 partial pressure, the amorphous tendency of Nb-Si-N films increases and the grain size decreases.

关 键 词：磁控溅射 Nb-Si-N 氮分压 结构 

分 类 号：TG174.4[金属学及工艺—金属表面处理] TB43[金属学及工艺—金属学]