离子刻蚀Ⅲ-Ⅴ族半导体材料的损伤机理  

Plasma etching ofⅢ-Ⅴsemiconductors and mechanism of crystalline damage

作　　者：吴惠桢[1] 曹萌[1] 劳燕锋[1] 刘成[1] 谢正生[1] 曹春芳[2] 

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]浙江大学物理系固体电子材料物理与器件实验室,浙江杭州310027

出　　处：《功能材料信息》2006年第3期7-11,共5页Functional Materials Information

基　　金：国家重点基础研究计划(973计划)资助项目(2003CB314903)

摘　　要：采用感应耦合等离子体(ICP)刻蚀技术对InGaN/AlGaN、InAsP/InP应变多量子阱和InAsP/InGaAsP应变单量子阱进行了系统研究,光致发光特性分析表明轻度离子刻蚀后量子阱发光强度得到显著增强,导致发光效率增强的物理机理是:干法刻蚀一方面使量子阱表面变粗糙,使出射光逃逸几率增大;另一方面Ar离子隧穿引起的量子阱内部微结构变化则是发光效率提高的主要原因。Muhiple quantum wells of InGaN/AlGaN, lnAsP/InP and single quantum well of lnAsP/lnGaAsP were studied by inductiVely coupled plasma etching. Photoluminescence （PL） characterization shows that shortperiod etching results significant enhancement of PL intensity of quantum wells. The underlying mechanism of PL enhancement is the surface roughening and the microstructure change of QWs resulted from the Ar ion channeling. The Former helps the escape of photons emitted from QWs, while latter is resulted from the crystalline changingby Ar^＋ tunnelling. As etching period increases the crystal damage becomes significant and luminescence efficiency gradually decreases.

关 键 词：半导体 刻蚀 应变多量子阱 损伤 

分 类 号：TN304.23[电子电信—物理电子学]