单晶硅压力传感器温度漂移的补偿方法  

Temperature compensation of mono crystal silicon pressure sensor

作　　者：王世清[1] 姜彤[1] 侯占民[1] 

机构地区：[1]中国电子科技集团公司第四十九研究所,黑龙江哈尔滨150001

出　　处：《传感器与微系统》2006年第7期33-35,39,共4页Transducer and Microsystem Technologies

摘　　要：介绍了单晶硅压力传感器温度漂移的机理，阐述了采取串并联电阻网络和有源电路分段等综合补偿方法的补偿原理。实验结果表明：在－45～85℃温区内，补偿后，热零点漂移和热灵敏度漂移从±0．5％FS／℃提高到±0．014％FS／℃。Temperature drift principle of mono crystal silicon pressure sensor is introduced,the principle and the detail compensation method of the series-parallel connection resistance net and impassive subsection synthesize way is described. The results of the experiment show that in the temperature range of -45- 85℃, the temperature drift of off set of the sensor and the temperature drift of sensitivity of sensor is improved from ± 0.5 % FS/℃ to ±0.014 % FS/℃.

关 键 词：传感器 热零点漂移 热灵敏度漂移 补偿 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]