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机构地区:[1]电子科技大学微电子与固体电子学院,成都610054
出 处:《物理学报》2006年第7期3656-3663,共8页Acta Physica Sinica
摘 要:建立了电荷非平衡情况下superjunction(SJ)耐压结构的二维电场分布理论模型.获得了浓度和宽度非平衡、梯形n-/p-区和横向线性缓变掺杂三种非平衡SJ结构的电场分布.理论分析结果与二维器件数值仿真软件MEDICI的仿真结果符合良好.虽然给出的电场分布为三角级数形式,但仍能从中获得很多重要信息.特别地,由此可求出非平衡SJ结构的峰值电场和耐压.该结果有助于对SJ结构的深入分析.2D analytic models for the electric field distribution of charge imbalance SJ structures, such as concentration and width imbalance, trapezoid n-/p- regions and lateral linearly graded doping have been presented. The comparison of the 2D analytic model with numerical device simulations shows that the proposed model can accurately predict electric field distribution. Although this solution is in the form of trigonometric series, some most important information also can be obtained from this solution. For example, the peak electric field and breakdown voltage in charge imbalance SJ structure can be obtained from the results of this paper.
关 键 词:SUPERJUNCTION 电场分布 电荷非平衡
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