考虑量子效应的短沟道MOSFET二维阈值电压模型  

2-D threshold voltage model for short-channel MOSFET with quantum-mechanical effects

作　　者：李艳萍[1] 徐静平[1] 陈卫兵[1] 许胜国[1] 季峰[1] 

机构地区：[1]华中科技大学电子科学与技术系,武汉430074

出　　处：《物理学报》2006年第7期3670-3676,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:60376019);湖北省自然科学基金(批准号:2003ABA087)资助的课题.~~

摘　　要：通过数值方法求解泊松方程和薛定谔方程的自洽解,提出了考虑量子效应时不同于经典理论的阈值条件,并得出了精确的一维阈值电压模型,模拟结果与实验十分符合.在此基础上,基于准二维泊松方程,通过考虑短沟道效应和量子效应,建立了较为精确的适合于小尺寸MOSFET的量子修正阈值电压模型,模型同样适用于(超)深亚微米高k栅介质MOSFET电特性的模拟和结构参数的设计.A threshold condition different from the classical one is proposed for MOSFET with quantum effects, by means of self- consistent numerical solution of the Schrodinger＇ s and Poisson＇ s equations, and thus an accurate 1-D threshold-voltage model is obtained with good agreements between simulated results and measurement data. Based on this 1-D model, an accurate 2-D quantum-modified threshold-voltage model for small-scale MOSFET is developed by solving the quasi-2D Poisson＇ s equation and taking short-channel effects and quantum-mechanical effects into consideration. The model can also be used for simulation of electrical properties and design of structural parameters for deep-submicron MOSFETs with high-k materials as gate dielectric.

关 键 词：阈值电压 量子效应 短沟道效应 高K栅介质 

分 类 号：TN386[电子电信—物理电子学]