氧和铒共注入硅的卢瑟福背散射和发光研究  

RUTHERFORD BACKSCATTERING AND LUMINESCENCE STUDIES OF Er AND O COIMPLANTED Si

作　　者：李仪[1] 宋航[1] 曹望和[1] 李菊生 金亿鑫[1] 如菲[2] 孟鸣岐[2] 刘向东[2] 

机构地区：[1]中国科学院长春物理研究所,长春130021 [2]山东大学物理系,济南250100

出　　处：《发光学报》1996年第4期346-350,共5页Chinese Journal of Luminescence

基　　金：国家自然科学基金;中国科学院基金资助课题

摘　　要：将铒和氧共注人硅中,卢瑟福背散射分析表明,退火后铒的分布剖面因共注入氧的剂量而异。在高氧剂量下,退火后铒保持退火前的剖面不变,样品再结晶良好。在中等氧剂量下,退火后铒的分布剖面出现双峰。认为退火过程中形成了铒—氧复合物。复合物的形成减缓了铒的偏析和扩散,影响了铒的削面再分布。铒和氧离子注入剂量的系列实验证实了氧在Er^(3+)发光中有重要作用。Er and O have been coimplanted in silicon. Rutherford backscattering and channeling analysis show that after annealing the Er profiles are different for the samples with various O doses. For the sample of high O dose, after annealing Er profile is same as the one before annealing, and the sample recrystallization is perfect. For the sample of middle O dose,, after annealing Er profiles present two peaks. We consider that Er-O complexes form during annealing. The formation! of complexes reduces the Er segregation and diffusivity and influences the Er redistribution profiles. A series of experiments of Er and O implantation doses confirm the crucial role of O in increasing Er3+ luminescence.

关 键 词：铒 硅 背散射分析 发光 

分 类 号：TN204[电子电信—物理电子学] O472.3[理学—半导体物理]