低温下ZnSe－ZnS多量子阱的光致发光光谱和喇曼散射谱  

LUMINESCENCE AND RAMAN SPECTRA OF ZnSe-ZnS MULTIPLE QUANTUM WELL STRUCTURES UNDER LOW TRMPERATURE

作　　者：赵福潭[1] 李多禄[1] 苏锡安 王淑梅 范希武[1] 

机构地区：[1]中国科学院激发态物理开放研究实验室

出　　处：《发光学报》1996年第1期17-22,共6页Chinese Journal of Luminescence

基　　金：国家自然科学基金

摘　　要：本文报导了２Ｋ下，在ＧａＡｓ（１００）衬底上用ＭＯＣＶＤ方法生长的ＺｎＳｅ－ＺｎＳ多量子阱材料的光致发光光谱和喇曼散射谱．用共振激发、共振喇曼和共振瑞利散射等方法对各发光谱带和喇曼散射峰的来源和机制进行了鉴别．We present luminescence and Raman spectra of ZnSe-ZnS multiple quantum well structures fabricated by MOCVD at 2K. The mechanism of the fluorescence emission bands and Raman scattering spectra have been distinguished used resonant excitation, resonant Raman and Rayleigh scattering method and the time dependence of Rayleigh scattering intersity.

关 键 词：多量子阱 光致发光 喇曼散射 硒化锌 

分 类 号：O472.3[理学—半导体物理] TN304.25[理学—物理]