InP/InGaAs PIN红外探测器增透膜的研究  

Investigation of Antireflection Coating for InGaAs/InP PIN Photodetectors

作　　者：杨集[1] 冯士维[1] 王承栋[1] 张跃宗[1] 李瑛[1] 孙静莹[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100022

出　　处：《半导体技术》2006年第8期594-597,共4页Semiconductor Technology

基　　金：北京市自然科学基金(No:4052009)

摘　　要：简单介绍了单层增透膜的基本工作原理,并理论计算了增透膜为SiO2和Si3N4时InP/InGaAsPIN探测器的透射率。计算结果表明Si3N4的增透效果要优于SiO2,通过测试淀积有Si3N4增透膜的探测器的响应度,并和理论计算的透射率进行比较,研究了不同的淀积工艺对响应度的影响和探测器在不同应用时膜厚的设计方法。The principle of transparency - increased theory of single antireflection （AR） coating was introduced. The transmittance of InP/InGaAs PIN infrared photodetectors which deposited with SiO2 and Si3N4 respectively as the AR coating was calculated. The results show that Si3N4 is better than SiO2 as AR coating. The responsibility for the photodetector which deposited with Si3N4 AR coating was measured, combining the simulating results of transmittance, the depositing technique and design method for thickness were investigated.

关 键 词：探测器 增透膜 淀积 

分 类 号：TN36[电子电信—物理电子学]