Refinement of an Analytical Approximation of the Surface Potential in MOSFETs  

MOSFET表面势解析近似方法的改进(英文)

作　　者：陆静学[1] 黄风义[1] 王志功[1] 吴文刚[2] 

机构地区：[1]东南大学射频与光电集成电路研究所,南京210096 [2]北京大学微电子学研究院,北京100871

出　　处：《Journal of Semiconductors》2006年第7期1155-1158,共4页半导体学报（英文版）

基　　金：国家自然科学基金(批准号:60476012);东南大学基金(批准号:XJ0404142);博士研究基金(批准号:20040286022)资助项目~~

摘　　要：A refinement of an analytical approximation of the surface potential in MOSFETs is proposed by introducing a high-order term. As compared to the conventional treatment with accuracy between 1nV and 0. 03mV in the cases with an oxide thickness tox = 1 ～ 10nm and substrate doping concentration Na = 1015 ～ 1018 cm-3 , this method yields an accuracy within about 1pV in all cases. This is comparable to numerical simulations, but does not require trading off much computation efficiency. More importantly, the spikes in the error curve associated with the traditional treatment are eliminated.通过在表面势公式中增加一高阶近似项,大大提高了传统表面势的解析近似精度.改进前通用参数的精度一般达到1nV量级,某些情况下只能达到0.03 mV.改进后的方法在所有情况下精度都达到1pV量级.同时,改进后的近似方法消除了原有方法误差曲线中的毛刺现象.

关 键 词：MOSFET surface potential analytical approximation device modeling 

分 类 号：TN386[电子电信—物理电子学]