具有多等位环的高压屏蔽新结构MER-LDMOS耐压分析  

A Novel Structure with Multiple Equipotential Rings for Shielding the Influence of a High Voltage Interconnection

作　　者：陈万军[1] 张波 李肇基[1] 

机构地区：[1]电子科技大学IC设计中心,成都610054

出　　处：《Journal of Semiconductors》2006年第7期1274-1279,共6页半导体学报（英文版）

基　　金：国家自然科学基金重点项目(批准号:60436030);国家自然科学基金(批准号:60576052);预研基金(批准号:51408060904DZ0211)资助项目~~

摘　　要：提出一种多等位环(multiple equipotential rings,MER)的高压屏蔽新结构MER-LDMOS,并解释了该结构的屏蔽机理,通过2D器件模拟验证了屏蔽机理的正确性.讨论了p-top剂量、等位环长度、等位环间距以及氧化层厚度对MER-LDMOS击穿电压的影响.结果表明MER-LDMOS突破常规LDMOS高压屏蔽的能力,击穿电压较常规LDMOS提高一倍以上;同时,该结构具有工艺简单、工艺容差大、反向泄漏电流小等优点,为高压集成电路中高压屏蔽的问题提供了一种新的解决方案.A novel structure with multiple equipotential rings（MER-LDMOS） for shielding the influence of a high voltage interconnection（HVI） is proposed, and its shielding model is explained and proved with 2D device simulation. The influences of various factors on the breakdown voltage of MER-LDMOS are discussed in detail, including the p-top dose, the length of equipotential ring,the distance between the equipotential rings, and the thickness of the SiO2. A significant increase in the breakdown voltage is realized using the MER-LDMOS structure, and its breakdown voltage increases by more than 100% compared with that of conventional LDMOS. Furthermore,the proposed structure has the advantages of simple fabrication, large process tolerance,and small leakage current. It is a new method for shielding the influence a high voltage interconnection in a high voltage integrated circuit.

关 键 词：高压互连线 等位环 击穿电压 LDMOS 

分 类 号：TN386[电子电信—物理电子学]