离子束辅助磁控溅射低温沉积ITO透明导电薄膜的研究  

On the ITO thin films prepared by ion-beam-aided magnetron sputtering at low temperature

作　　者：望咏林[1] 颜悦[1] 沈玫[1] 贺会权[1] 纪建超[1] 张官理[1] 

机构地区：[1]北京航空材料研究院,北京100095

出　　处：《真空》2006年第4期7-9,共3页Vacuum

基　　金：国家"十五"预研基金资助(413100202)

摘　　要：本文对离子束辅助磁控溅射低温沉积的ITO薄膜进行了研究,重点考察了辅助离子束能量对ITO薄膜的光电性能和晶体结构的影响。结果表明:当A r/O2辅助离子束能量为900 eV左右时能够有效改善ITO薄膜的光电性能,在从非晶到多晶的转变过程中ITO薄膜具有较低的电阻率。在聚碳酸酯(PC)基片上制备了平均可见光透过率81.0%、电阻率为5.668×10-4ohm cm、结构致密且附着力良好的ITO薄膜,基片无变形。Investigates the ITO thin films deposited through ion-beam-aided magnetron sputtering at low temperature, focusing on the influence of ion beam energy on the photoelectrical properties and crystal structure of ITO thin films. The results showed that the photoelectric properties of the films can be effectively improved if the energy of the Ar/O2 ion beam in aid of deposition is about 900 eV, and there is a lower resistivity of ITO films in the process of transforming films forms from amorphous into polycrystalline structure. A film resistivity of 5. 668×10^-4 ohm ·cm is achieved on polycarbonate（PC） substrate at low temperature, on which the ITO films are deposited with a mean visible transparency up to 81.0%. The films are compact and have a good adhesion, especially no deformation found on the substrate.

关 键 词：低温沉积 离子束辅助沉积 磁控溅射 ITO 透明导电薄膜 

分 类 号：TB43[一般工业技术]