磁控反应溅射TiO_2薄膜的实验研究  

Experimental investigation on TiO_2 thin films prepared via reactive magnetron sputtering

作　　者：常学森[1] 巴德纯[1] 闻立时[2] 刘坤[1] 李飞[1] 张健[1] 

机构地区：[1]东北大学真空与流体工程研究中心,辽宁沈阳110004 [2]中国科学院金属研究所,辽宁沈阳110015

出　　处：《真空》2006年第4期13-15,共3页Vacuum

摘　　要：应用直流和中频交流程序自动控制磁控溅射设备,利用金属T i靶、纯F e靶制备出了有一定厚度的质量较好的不同氧流量的F e掺杂T iO2薄膜,T iO2薄膜被沉积在玻璃基底上。薄膜的制备用程序控制。通过在T iO2薄膜中形成一定的结构,并利用各种分析测试手段对其性能进行了测试,初步探讨了不同氧流量对T iO2薄膜的影响。实验表明程序自动控制不同氧流量F e掺杂T iO2薄膜的特性有了很大改变。By means of programmed DC and Ac/m. f. magnetron sputtering equipment and making use of metallic Ti and pure Fe targets, the quality Fe-doped TiO2 thin films of certain thickness were deposited on glass substrates. During the sputtering process the flowrate of O2 as reactive gas was changed through program to form different specific microstructures of TiO2 thin films. The performance of these films were tested and analyzed by different means and the effect of changing O2 flowrate on TiO2 thin films was explored, The results showed that the performance of Fe-doped TiO2 thin films changes greatly when changing the O2 flowrate through program.

关 键 词：纳米二氧化钛薄膜 氧流量 亲水性 磁控溅射 

分 类 号：TB43[一般工业技术]