铝诱导非晶硅薄膜快速低温晶化研究  

Study on aluminum-induced crystallization of a-Si thin films

作　　者：徐慢[1] 夏冬林[1] 杨晟[1] 赵修建[1] 

机构地区：[1]硅酸盐材料工程教育部重点实验室(武汉理工大学),湖北武汉430070

出　　处：《真空》2006年第4期16-18,共3页Vacuum

基　　金：硅酸盐材料工程教育部重点实验室(武汉理工大学)开放课题基金资助项目(SYSJJ2005-12);武汉理工大学校基金(2005XJJ054)

摘　　要：采用金属铝诱导晶化非晶硅薄膜的方法制备多晶硅薄膜。研究了不同的退火温度对a-S i薄膜晶化的影响,采用XRD,R am an,SEM等测试手段分析了实验结果。实验结果发现非晶硅薄膜在400℃下退火20 m in薄膜仍为非晶结构(a-S i),在450℃下退火20 m in后非晶硅开始晶化且随着温度的升高,且晶化程度加强。Amorphous silicon （a-Si） thin films were deposited on glass substrate by PECVD, and polycrystalline silicon （poly-Si） thin films were prepared by aluminum-induced crystallization （AIC）. The effect of annealing temperature on the crystallization of a-Si films was investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM, It was found that the a-Si film remains amorphous after annealing at 400℃ for 20min, but it begins to crystallize after annealing at 450℃ for 20min with its crystallinity improved obviously with increasing annealing temperature.

关 键 词：铝诱导晶化法(AlC) 非晶硅薄膜 多晶硅薄膜 

分 类 号：O484[理学—固体物理] TN304[理学—物理]