硼硅玻璃与硅阳极键合机理分析  

Mechanisms of anodic bonding between borosilicate glass and silicon

作　　者：宋永刚[1] 秦会峰[1] 胡利方[1] 鲁晓莹[1] 孟庆森[1] 

机构地区：[1]太原理工大学材料科学与工程学院,山西太原030024

出　　处：《兵器材料科学与工程》2006年第4期5-7,共3页Ordnance Material Science and Engineering

基　　金：国家自然科学基金项目(50375105)

摘　　要：硼硅玻璃与硅进行阳极键合试验,通过扫描电镜及能谱分析对键合界面的微观结构进行分析,结果表明:玻璃/硅的键合界面有明显的中间过渡层生成;在电场力作用下玻璃耗尽层中的氧负离子向界面迁移扩散并与硅发生氧化反应是形成中间过渡层的主要原因,界面过渡层的形成是玻璃/硅界面键合实现连接的基本条件。Anodic bonding of borosilicate glass/silicon was achieved, and the microstructure of the bonding interface was analyzed by SEM and EDX. It indicates that transitional layer was formed at the bonding interface of borosilicate glass/silicon. It is believed that O^2- in the depletion of glass drifting to the interface and then reacting with the silicon is the main reason of anodic bonding under the electric field. It is assumed that formation of transitional layer is the essential condition for good bonding between silicon and glass.

关 键 词：阳极键合 硼硅玻璃 硅 过渡区 

分 类 号：TG453[金属学及工艺—焊接]