散射理论方法应用于重构的β－SiC（100）表面  

SCATTERING THEORETICAL METHOD FOR THE RECONSTRUCTED β SiC(100) SURFACE

作　　者：郭巧能[1] 范希庆[1] 张德萱 马丙现[1] 

机构地区：[1]郑州大学物理工程学院

出　　处：《物理学报》1996年第11期1875-1883,共9页Acta Physica Sinica

摘　　要：用Ｐｏｌｍａｎｎ散射理论方法分别计算了理想的和（２×１）重构的βＳｉＣ（１００）表面带结构以及层和原子轨道态密度．结果表明，重构的主要影响发生在禁区内，重构的Ｓｉ和Ｃ截断表面都具有半导体性，并且得到的表面带与实验相符．By using scattering theoretical method, we have calculated the surface band structure of ideal and (2×1) reconstructed β SiC(100) surface, and the lay , atom and orbital resolved densities of states. The results show that the major effects of reconstruction occur in the band gap energy region, and the reconstructed Si and C terminated surfaces are semiconducting. Our calculated surface band structure are in good agreement with experiments. According to the bonding states and localized state densities of two dimerized atoms, the dimeric symmetry of Si atoms and the dimeric asymmetry of C atoms have qualitatively been explained.

关 键 词：碳化硅单晶 散射 表面带结构 态密度 

分 类 号：TN304.24[电子电信—物理电子学] O471.4[理学—半导体物理]