GaAs光电阴极制备工艺的俄歇分析  

AES STUDIES OF GaAs PHOTOCATHODE FABRICATION PROCESS

作　　者：孙长印[1] 张书明[1] 朱李安[1] 赛小峰[1] 高鸿楷[1] 侯洵[1] 

机构地区：[1]中国科学院西安光学精密机械研究所半导体室

出　　处：《光子学报》1996年第10期902-905,共4页Acta Photonica Sinica

摘　　要：我们在一台制作第三代象增强器的超高真空系统中安装了俄歇（Ａｕｇｅｒ）能谱仪，以其对ＧａＡｓ光电阴极的制备过程进行在线监测分析，其中包括选择性腐蚀过程的俄歇观测，阴极激活前清洁措施的效果评价和Ｃｓ－Ｏ激活过程中Ａｓ／Ｇａ俄歇信号比对光电灵敏度的影响，Ｃｓ源纯度的分析及对光电发射的影响。根据分析结果，激活出了１０００μＡ／ｌｍ的反射式光电阴极和５００μＡ／ｌｍ的透射式光电阴极。s The fabrication steps of photocathode for the third generation image intensifier have been studied by an Auger Eletron Spectroscope in situ a UHV system. In this paper,the resultant surface after selective etching are evaluated,the effects of the cleaning procedures before activation are com-pared,the relation between As/Ga Auger signal ratio and photoemission are reported.Photoemission as high as S=1000μA/lm has been obtained with a reflective GaAs cathode and S=500μA/lm with a transmissive cathode.

关 键 词：光电阴极 热清洁 激活 俄歇分析 

分 类 号：TN203[电子电信—物理电子学]