共振隧穿二极管的材料结构设计——共振隧穿器件讲座(5)  

Design on the Material Structure of RTD:Lecture of RTD(5)

作　　者：郭维廉[1] 

机构地区：[1]天津工业大学信息与通讯工程学院

出　　处：《微纳电子技术》2006年第8期361-365,392,共6页Micronanoelectronic Technology

摘　　要：在系统细致分析RTD材料结构参数与器件特性参数关系的基础上,确立了RTD材料结构的设计原则和设计方法,并对以SI-GaAs为衬底的RTD分子束外延(MBE)材料生长结构进行了设计。所研制出的RTD参数实测结果证实了此设计方法是正确的。Based on the systematic and detailed analysis on the correlation between material structure parameters and device characteristic parameters, the design principle and design method on RTD material structure were established. And the MBE material structure on RTD for SI-GaAs substrate was designed by this design method. It demonstrated that the design method was correct by the measured results from the fabricated RTD parameters.

关 键 词：共振隧穿二极管 材料结构设计 分子束外延 

分 类 号：TN31[电子电信—物理电子学]