不同栅结构的部分耗尽NMOSFET/SIMOX的总剂量辐照效应研究  

Total-dose irradiation effect of partially-depleted NMOSFET/SIMOX with two different gate structures

作　　者：钱聪[1] 张恩霞[1] 贺威[1] 张正选[1] 张峰[1] 林成鲁[1] 王英民[2] 王小荷[2] 赵桂茹[2] 恩云飞[3] 罗宏伟[3] 师谦[3] 

机构地区：[1]中国科学院上海微系统与信息技术研究所,上海200050 [2]中国航天时代电子公司第771研究所,西安710054 [3]信息产业部电子第五研究所(中国赛宝实验室),广州510610

出　　处：《功能材料与器件学报》2006年第4期308-312,共5页Journal of Functional Materials and Devices

摘　　要：研究了在改性注氧隔离(SIMOX)材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。实验表明在10keV的X-射线总剂量辐照下,器件的背栅、正栅阈值电压负向漂移和漏电流都控制在较小的水平;在2Mrad(SiO2)的辐照下仍能正常工作。研究证实了无论哪种栅结构,对于背栅,PG均为最劣偏置,其次是OFF偏置,而ON偏置下器件受辐照的影响最小;而对于正栅,ON均为最劣偏置。通过拟合计算出了绝缘埋层(BOX,即埋氧)中的饱和净正电荷密度Not和空穴俘获分数α。Total - dose irradiation effect of partially - depleted NMOS transistors with gate - all - around and H -gate structures fabricated on modified SIMOX was studied. It is found experimentally that back and top gate threshold shifts and drain current is confined to a low level during irradiation. The transistors can work properly under the dose of 2 Mrad （ SiO2 ）. It is also confirmed that for the back gate of both gate - all - around and H gate, PG is the worst case; for the top gate, ON is the worst case. The saturated net positive charge density Not and the fraction of hole capture α in buried oxides are calculated by data fitting.

关 键 词：绝缘体上硅(SOI) 总剂量辐照效应 环栅结构 H型栅结构 

分 类 号：TN386.1[电子电信—物理电子学]