部分耗尽环栅CMOS/SOI总剂量辐射效应研究  

Total dose radiation effect on partially-depleted CMOS/SOI with enclose-gate structure

作　　者：贺威[1] 张恩霞[1] 钱聪[1] 张正选[1] 

机构地区：[1]中国科学院上海微系统与信息技术研究所

出　　处：《功能材料与器件学报》2006年第4期313-316,共4页Journal of Functional Materials and Devices

摘　　要：采用硅离子注入工艺对注氧隔离(SIMOX)材料进行改性,在改性材料和标准SIMOX材料上制作了部分耗尽环型栅CMOS/SOI反相器,并对其进行60Coγ射线总剂量辐照试验。结果表明,受到同样总剂量辐射后,改性材料制作的反相器与标准SIMOX材料制作的反相器相比,转换电压漂移小的多,亚阈漏电也得到明显改善,具有较高的抗总剂量辐射水平。Silicon ion implantion was used to improve SIMOX substrate. Partially -depleped CMOS/SOI inverters with enclose -gate structure were fabricated on improved SIMOX substrate and standard SIMOX substrate. The results of ^60Coγ -ray test demonstrate that compared to standard CMOS/SOI inverters, the improved CMOS/SOI inverters have less switching voltage shifts and smaller leakage same total dose irradiation, which shows that the improved CMOS/SOI inverters have hardness.

关 键 词：离子注入 注氧隔离 绝缘体上硅(SOI) 总剂量辐射效应 

分 类 号：TN386[电子电信—物理电子学] TN405