原子力显微镜在GaN研究中的应用  

The application of atomic force microscopy in the investigation of GaN

作　　者：王其民[1] 赵丽伟[1] 滕晓云[1] 张帷[1] 刘彩池[1] 

机构地区：[1]河北工业大学信息功能材料研究所,天津300130

出　　处：《现代仪器》2006年第4期25-27,共3页Modern Instruments

基　　金：教育部新世纪优秀人才计划;河北省自然科学基金项目(E2005000042)

摘　　要：本文采用原子力显微镜(AFM)对Si基外延GaN的形貌及出现的V缺陷进行研究。实验结果表明,GaN外延层厚度为0.5μm时粗糙度最低且没有裂纹出现;厚度为0.4μm的GaN表面出现小坑———V缺陷,密度约为108cm-2。In this paper, the surface topography of GaN grown on Si substrate and V defects were investigated by atomic force microscopy （AFM）. The results showed that the sample with thickness 0.5μm has a lower roughness than other samples, and no microcracks occurred. Furthermore, there were many pits on the sample whose thickness is 0.4μm, the density is about 108cm-2. The pits were V defects.

关 键 词：原子力显微镜 GAN 表面形貌 V缺陷 

分 类 号：TN304.23[电子电信—物理电子学] TP391[自动化与计算机技术—计算机应用技术]