一种新颖的功率MOSFET SPICE宏模型  

A Novel SPICE Macro-Model for Power MOSFET's

作　　者：曾天志[1] 张波[1] 罗萍[1] 蒲奎[1] 赵露[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《微电子学》2006年第4期407-410,共4页Microelectronics

摘　　要：提出了一种新颖的功率MOSFET宏模型结构,详细介绍了宏模型建立的整个流程;并将此模型的仿真结果与实验数据进行比较,验证了模型的精度。此模型考虑了功率MOSFET必要的二阶效应,并采用行为级模型来处理JFET电阻。A novel SPICE macro-model for power MOSFET＇s is presented. The entire process for the modeling of power MOSFET＇s is described in detail. A comparison is made between simulated results with measured results to verify the accuracy of the new model. The 2nd-order effect necessary for power MOSFET＇s was taken into account in the macro-model and behavioral model was used to deal with JFET resistance.

关 键 词：功率MOSFET 宏模型 二阶效应 JFET电阻 行为级模型 

分 类 号：TN302[电子电信—物理电子学]