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作 者:江锡顺[1] 曹春斌[1] 蔡琪[1] 宋学萍[1] 孙兆奇[1]
机构地区:[1]安徽大学物理与材料科学学院,安徽合肥230039
出 处:《功能材料》2006年第7期1121-1123,共3页Journal of Functional Materials
基 金:国家自然科学基金资助项目(59972001);安徽省自然科学基金资助项目(01044901);安徽省人才专项基金资助项目(2004Z029);安徽大学人才队伍建设基金资助项目(05025103)
摘 要:采用射频磁控溅射法分别在不同温度衬底上制备了厚度为320nm的ZnS薄膜,用XRD和光学相移技术研究了不同衬底温度下薄膜的微结构和应力。结果表明:不同温度衬底上沉积的ZnS薄膜均呈多晶状态,衬底温度由50℃上升到400℃的过程中,其择优取向发生了变化,晶粒有明显的生长方向;ZnS薄膜应力随着衬底温度升高逐渐减小,衬底温度在250~350℃之间的ZnS薄膜应力较小且在选区内分布比较均匀。320nm-thiekness ZnS films are prepared on different substrate temperature by RF magnetron sputtering. The mierostrueture and stress distribution of the films with different substrate temperature were studied by X-ray diffraction and optical phase-shift technology. The results show that the polyerystalline ZnS films are consisted of fee ZnS nanopartieles. The ZnS particles gradually enlarge with the substrate temperature increasing from 50 to 400℃. The preferred orientation changes and the particles have apparent upspring orientation. The stress of ZnS films gradually releases with the substrate temperature increasing. It becomes smaller and better-distributed on the range of selected area as the substrate temperature increases from 250 to 350℃.
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