ZnO陶瓷靶制备及其薄膜RF溅射工艺研究  

Li-doped ZnO Ceramic Target Preparation and RF Magnetron Sputtering ZnO Films

作　　者：陈祝[1] 张树人[2] 杜善义[3] 杨成韬[2] 郑泽渔[2] 李波[2] 孙明霞[2] 

机构地区：[1]成都信息工程学院通信工程系,成都610225 [2]电子科技大学微电子与固体电子学院,成都610054 [3]哈尔滨工业大学复合材料研究所,哈尔滨150001

出　　处：《无机材料学报》2006年第4期1011-1017,共7页Journal of Inorganic Materials

摘　　要：利用固相反应制备了直径为70mm,厚度为10-15mm高质量掺杂Li2CO2的ZnO陶瓷靶材,实验了不同摩尔浓度的Li+掺杂对靶材性能的影响,确定了最佳Li+掺杂量为2．2mol％,同时通过在不同温度烧结实验、不同成型压力实验确定了ZnO靶材制备的最佳工艺,并采用所制备的ZnO-Li2.2％陶瓷靶和RF(射频磁控)技术在Si(100)、玻璃(载玻片)、及Pt(111)／Ti／SiO2／Si(100)基片上制备出高度c轴(002)择优取向的ZnO薄膜,其绝缘电阻率ρ为4．12×108Ω·cm,达到了声表面波器件(SAW)的使用要求．We successfully prepared high quality Li-doped ZnO ceramic targets with 70mm in diameter and 10-15mm in depth by solid-state reactions. The paper studied the influence of different concentration of Li2CO3 on the electrical properties of ZnO ceramic target. By comparing and analyzing the IR（ insulative resistivity ） and tgS（dielectric loss）, the optimum concentration of Li2CO3 doped in ZnO ceramic target was obtained（2.2%mol ratio）. And the optimum process for preparing ZnO-Li22% ceramic target was also realized through the investigation of physics and electrics of ZnO ceramic under the different sintering temperatures and molding pressure treatments. By using Li22%-doped ZnO ceramic as the target, the ZnO films with highly caxis （002） preferred orientation were grown by RF magnetron sputtering on Si（100）, glass and Pt（111）/Ti/SiO2/Si（100） substrates respectively.

关 键 词：陶瓷靶 氧化锌薄膜 射频磁控溅射 择优取向 

分 类 号：N304[自然科学总论] TB43[一般工业技术]