SOI MOSFET器件的热载流子退化机理  

Hot Carrier Degradation Mechanisms in SOI MOSFETs

作　　者：章晓文[1] 恩云飞[1] 赵文彬[2] 李恒[2] 

机构地区：[1]信息产业部电子第五研究所,广东广州510610 [2]中国电子科技集团公司第五十八研究所,江苏无锡214035

出　　处：《电子产品可靠性与环境试验》2006年第4期9-13,共5页Electronic Product Reliability and Environmental Testing

基　　金：模拟集成电路国家级重点实验室基金资助项目(51433020101DZ1504);电子元器件可靠性物理及应用技术国家级重点实验室基金资助项目(514330504DZ1502)

摘　　要：介绍了绝缘体上硅(SOI)材料的制作方法,阐述了SOI MOSFET器件的热载流子注入效应的失效机理。研究表明:前沟和背面缺陷的耦合效应是SOI器件的特有现象,对SOI器件的退化构成潜在的威胁。虽然失效机理比体硅器件复杂,但并不会阻碍高性能、低电压ULSI SOI电路的发展。The fabrication of SOl （Silieon-on-insulatoi） materials is introduced. The SOI MOSFET hot carrier degradation mechanism is discussed. It is demonstrated that the coupling between back-interface defects and front channel properties is a unique and very. challenging degradation phenomena in SOh Although the aging mechanisms and investigation methods are more sophisticated than those in bulk Si, the degradation of SOl MOSFETs does not appear to impede the development of high performance low-voltage ULSI SOl circuits.

关 键 词：绝缘体上硅 热载流子注入效应 失效机理 可靠性 

分 类 号：TN386[电子电信—物理电子学]