A High Performance 0.18μm RF nMOSFET with 53GHz Cutoff Frequency  

截止频率53GHz的高性能0 .18μm射频nMOSFET(英文)

作　　者：杨荣[1] 李俊峰[1] 徐秋霞[1] 海潮和[1] 韩郑生[1] 钱鹤[1] 

机构地区：[1]中国科学院微电子研究所,北京100029

出　　处：《Journal of Semiconductors》2006年第8期1343-1346,共4页半导体学报（英文版）

基　　金：国家高技术研究发展计划(批准号:2002AA1Z1580);国家自然科学基金(批准号:60576051)资助项目~~

摘　　要：This paper presents the fabrication and performance of a 0.18μm nMOSFET for RF applications. This device features a nitrided oxide/poly-silicon gate stack, a lightly-doped-drain source/drain extension, a retrograde channel doping profile, and a multiple-finger-gate layout,each of which is achieved with conventional semiconductor fabrication facilities. The 0.18μm gate length is obtained by e-beam direct-writing. The device is fabricated with a simple process flow and exhibits excellent DC and RF performance： the threshold voltage of 0.52V, the sub-threshold swing of 80mV/dec, the drain-induced-barrier-lowering factor of 69mV/V, the off-state current of 0.5nA/μm, the saturation drive current of 458μA/μm （for the 6nm gate oxide and the 3V supply voltage）, the saturation transconductance of 212μS/μm,and the cutoff frequency of 53GHz.阐述了0·18μm射频nMOSFET的制造和性能.器件采用氮化栅氧化层/多晶栅结构、轻掺杂源漏浅延伸结、倒退的沟道掺杂分布和叉指栅结构.除0·18μm的栅线条采用电子束直写技术外,其他结构均通过常规的半导体制造设备实现.按照简洁的工艺流程制备了器件,获得了优良的直流和射频性能:阈值电压0·52V,亚阈值斜率80mV/dec ,漏致势垒降低因子69mV/ V,截止电流0·5nA/μm,饱和驱动电流458μA/μm,饱和跨导212μS/μm(6nm氧化层,3V驱动电压)及截止频率53GHz .

关 键 词：STRUCTURE PROCESS radio frequency NMOSFET 

分 类 号：TN386[电子电信—物理电子学]