纤锌矿In-xGa_(1-x)N/GaN量子阱中的界面声子模  

Interface Optical-phonon Modes in Wurtzite In_xGa_(1-x)N/GaN Quantum Wells

作　　者：危书义[1] 张芳[1] 黄文登[1] 李伟[1] 赵旭[1] 

机构地区：[1]河南师范大学物理与信息工程学院,河南新乡453007

出　　处：《液晶与显示》2006年第4期336-342,共7页Chinese Journal of Liquid Crystals and Displays

基　　金：河南省自然科学基金资助项目(No.0611053800);河南省教育厅自然科学基础研究计划项目(No.2004140004)

摘　　要：采用赝原胞模型计算讨论纤锌矿InxGa1-xN混晶性质;基于宏观介电连续模型的传递矩阵方法研究任意层纤锌矿量子阱中的界面声子,得出任意层纤锌矿量子阱中的界面声子的本征模解和单量子阱的色散关系,并对InxGa1-xN/GaN单量子阱界面声子的色散关系进行了数值计算和讨论。结果表明,纤锌矿InxGa1-xN混晶中的E1声子和A1声子都表现为单模行为;在对称非应变单量子阱GaN/InxGa1-xN/GaN中,界面声子频率随x的变化呈线性关系。Based on the pseudo-unit-cell approach the ProPerties of wurtzite InxGa1-xN/GaN mixed crystal are calculated and discussed. Within the framework of the dielectric-continuum model and Loudon＇s uniaxial crystal model, the dispersion relation of the interface optical phonon modes in a single wurtzite quantum well（QW） is derived by using the transfer-matrix method. The analytical formulas can be directlyapplied to single QW and QWs and superlattices （SLs）. The dispersion relations of the interface optical phonons are investigated for InxGa1-xN/GaN single QW. It is found that A1 and E1 branches of optical phonons in wurtzite InxGa1-xN/GaN exhibit one-mode behavior, the interface-phonon energy varies almost linearly as the concentration ratio x increases from zero to 1.

关 键 词：InxGa1-xN/GaN 界面声子 量子阱 

分 类 号：O471.4[理学—半导体物理] O471.3[理学—物理]