氮化铝薄膜的厚度对场发射特性的影响  

Field Emission Characteristics of AlN Films with Different Thicknesses

作　　者：李英爱[1] 刘立华[1] 何志[1] 杨大鹏[1] 马红梅[1] 赵永年[1] 

机构地区：[1]吉林大学超硬材料国家重点实验室,吉林长春130012

出　　处：《液晶与显示》2006年第4期379-383,共5页Chinese Journal of Liquid Crystals and Displays

摘　　要：采用射频磁控溅射方法，在n型（100）Si基底上沉积了不同厚度（20～150nm）纤锌矿结构的纳米A1N薄膜。在超高真空系统中测量了不同膜厚样品的场发射特性，发现阈值电场随着厚度的增加有增大的趋势。厚度为44nm的A1N薄膜样品具有最低的阈值电场（10V／μm），当外加电场为35V／μm时，最高发射电流密度为284μA／cm^2。A1N薄膜场发射F-N曲线表明，在外加电场作用下，电子隧穿了A1N薄膜表面势垒发射到真空。Nanometer aluminum nitride （A1N） thin films with various thicknesses （20～150 nm） were prepared on Si（100） substrates by r.f. magnetic sputtering physical vapor deposition. X-ray diffraction indicates that the prepared films are A1N films. The field emission characteristics of the A1N films were measured in an ultra-high vacuum system. A threshold electric field of 10 V/μm and the highest emission current density of 284 μA/cm^2 were obtained for the 44 nm-thiek A1N film. The threshold electric field has a tendency to increase with the increase of thickness in nanometer range. The FowlerNordheim plots show that eleetrons were emitted from A1N film to vacuum by tunneling through the potential barrier at the surface of A1N film.

关 键 词：氮化铝薄膜 场发射特性 厚度 

分 类 号：TN873.95[电子电信—信息与通信工程]