等离子体浸没离子注入的二维元胞粒子法计算机模拟与剂量分布研究  

2D Particle-in-cell Simulation of Plasma Immersion Ion Implantation and Dose Distribution

作　　者：吴志玮[1] 丁可[1] 顾昌鑫[1] 孙琦[1] 单莉英[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2006年第4期303-307,共5页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金资助项目(No.50301005)

摘　　要：采用二维元胞粒子模型(PIC),模拟了一个完整脉冲时段内,等离子体浸没离子注入平板靶的过程。重点研究了等离子体鞘层的时空演化规律,以及入射离子流密度、入射离子角度与能量的分布,由此得到了注入离子剂量在靶表面的分布。模型结果表明:等离子体鞘层的扩展先快后慢,且形状由椭圆柱形向圆柱形演化,对靶的保形性逐渐变差;注入离子剂量在靶表面的分布不均匀,在边角附近出现峰值;同时,在得到的入射离子信息基础上,对注入离子在改性层中的浓度深度分布研究表明,在靶的不同位置注入的离子在改性层中的浓度深度分布有显著差别,在靶边角处,注入离子的保留剂量很低,投影射程浅,浓度深度分布展宽较窄。Plasma immersion ion implantation （PⅢ） for a planar target was simulated using 2D particle-in-cell （PIC） model. The plasma sheath evolution has been investigated. The incidention flux, the ion impact angle and the ion impact energy were calculated and synthesized to determine the ion implantation dose on the target surface. The simulation results show that the sheath expands with a decreasing speed and transfer from elliptically cylindrical to circularly cylindrical. The distribution of ion implantation dose on the target surface is not uniform, with a peak near the target comer.The concentration depth profiles of retained dose in the target are also studied by transport of ions in matter（TRIM） simulation. The results show that at different positions of the target, the profiles are considerably different. At the target comer, the ion retained dose is low, with a distribution that is narrow and mostly near the target surface.

关 键 词：等离子体浸没离子注入 二维元胞粒子模拟 平面靶 剂量分布 浓度深度分布 

分 类 号：O539[理学—等离子体物理] O411.3[理学—物理]