原子力显微镜研究多晶硅和铝硅合金表面形貌  

STUDY ON SURFACE MORPHOLOGIES OF POLYCRYS TALLINE SILICON AND ALUMINIUM SILICON ALLOY BY ATOMIC FORCE MICROSCOPY

作　　者：吴敬文[1] 陆祖宏[1] 韦钰[1] 朱伟民[1] 

机构地区：[1]东南大学,无锡华晶集团

出　　处：《应用科学学报》1996年第4期481-487,共7页Journal of Applied Sciences

摘　　要：利用原子力显微镜研究了不同淀积温度条件下低压化学气相淀积（ＬＰＣＶＤ）多晶硅薄膜的表面形貌．发现淀积时间一定时，随着淀积温度的升高，多晶硅薄膜的晶粒尺寸和表面粗糙度均非线性地增大．另外，还研究了不同基片温度条件下磁控溅射铝硅含金薄膜的表面形貌．In this Paper, we studied the surface morphology of Low PressureChemical Vapor Deposition (LPCVD) polycrstalline silicon at differentdeposition temperatures by Atomic Force Microscopy (AFM).We found whenthe deposition time was the same, the grain size and microroughness increasedwith the increse of the deposition temperature. In addition, we also studied themorphology of magnetron sputtered aluminium silicon alloy at different sputtertemperatures by AFM. We found the irregular-shaped grains tilting in varyingdegrees and piled up in space at 0'O and the irregular-shaped grains joiningtogether on a plane at 200℃. Furthermore when the sputter temperature waa400℃, the grain size turned to be square-shaped.

关 键 词：原子力显微镜 多晶硅 铝硅合金 表面形貌 薄膜 

分 类 号：TN304.055[电子电信—物理电子学]