铁电薄膜漏电流研究现状  

Leakage Current of Ferroelectric Thin Films

作　　者：杨艳[1] 张树人[1] 刘敬松[1] 张洪伟[1] 刘蒙[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,成都610054

出　　处：《绝缘材料》2006年第4期51-55,共5页Insulating Materials

基　　金：国家安全重大基础研究项目(51310Z)

摘　　要：铁电薄膜的漏电流问题一直是困扰铁电存储器发展的重要问题。文章介绍了铁电薄膜的主要导电机理如热激发电子电导、空间电荷限制电流(SCLC)、Pool-Frenkel发射、肖特基发射等,影响漏电流大小的主要因素如薄膜厚度、工艺温度、晶粒尺寸、电极材料、搀杂离子等。同时介绍了漏电流对铁电薄膜极化和抗疲劳特性的影响。The development of ferroelectric memory was always worried by the leakage current of ferroelectric thin films. The thermal electric conduction, space charge limited current （SCLC）, Pool-Frenkel emission and Schottky emission were outlined to explained conductive mechanism. The factors of leakage current including thickness of films, temperature, grain size, electrode, doped ions,et al were analyzed. Besides above statements, the influence of the leakage current to polarization and fatigue of ferroelectric films was outlined.

关 键 词：铁电薄膜 漏电流 导电机理 

分 类 号：TM221[一般工业技术—材料科学与工程]