ZnSe的MOVPE生长相图：以DMZn和H_2Se为源  

Phase Diagram for MOVPE Growth of ZnSe:Using DMZn and H_2Se as Source Materials

作　　者：段树坤[1] 陆大成[1] 

机构地区：[1]集成光电子学国家重点实验室中国科学院半导体研究所,半导体材料科学实验室中国科学院半导体研究所

出　　处：《Journal of Semiconductors》1996年第6期401-405,共5页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文基于热力学平衡计算，首次给出以ＤＭＺｎ和Ｈ２Ｓｅ为源，ＭＯＶＰＥ生长ＺｎＳｅ的相图．文中讨论了ＺｎＳｅ单一凝聚相区的范围，以及可能出现ＺｎＳｅ（ｓ）＋Ｚｎ（ｓ）或ＺｎＳｅ（ｓ）＋Ｓｅ（ｌ）两种双凝聚相区的条件．Abstract A phase diagram for MOVPE growth of ZnSe using DMZn and H2Se has been proposed for the first time, based on thermodynamic equilibrium to be established at the solid-vapor interface. The region for single condensed phase of ZnSe(s) and the growth conditions of appearance of double condensed phyases of ZnSe (s) +Zn (s) and ZnSe (s) +Se (1) have been discussed.PACC: 8115H, 8130D

关 键 词：DMZn源 H2Se源 MOVPE 生长相图 硒化锌 发光器件 

分 类 号：TN383[电子电信—物理电子学]