InGaAs／GaAs应变层量子阱激光器深中心行为  

Behaviour of Deep Centers in InGaAs/GaAs Strained Layer Quantum Well Lasers

作　　者：卢励吾[1] 封松林[1] 周洁[1] 杨国文[1] 徐俊英[1] 郭春伟 

机构地区：[1]半导体超晶格国家重点实验室,中国科学院半导体研究所,集成光电子学联合实验室半导体所实验区,北京四通办公设备有限公司

出　　处：《Journal of Semiconductors》1996年第7期493-499,共7页半导体学报（英文版）

基　　金：国家集成光电子学联合实验室资助

摘　　要：应用深能级瞬态谱（ＤＬＴＳ）技术研究分子束外延（ＭＢＥ）和二次液相外延（ＬＰＥ）生长的ＩｎＧａＡｓ／ＧａＡｓ应变层量子季阱激光器深中心行为．在ＭＢＥ激光器的ｎ－ＡｌｘＧａ１－ｘＡｓ组分缓变层和限制层里，除众所周知的ＤＸ中心外，还观察到有较大俘获截面的深（空穴、电子）陷阱及其相互转化．这些陷阱可能分布在ｘ从０到０．４０和ｘ—０．４０的ｎ－ＡｌｘＧａ１－ｘＡｓ层里ｘ值不连续的界面附近．而在ＬＰＥ激光器的ｎ－ＡｌｘＧａ１－ｘＡｓ组分缓变层和限制层里，ＤＸ中心浓度明显减少，且深（空穴、电子）陷阱消失，这表明ＬＰＥ掩埋结构工艺可能对激光器深中心的消除或减少有一定作用．深中心的变化与样品阈值电流密度的改善是相符的．Abstract The behavious of deep centers in InGaAs/GaAs GRINSCH-STL-MQW lasers grown by MBE and InGaAs/GaAs GRINSCH-STL-MQW-BH lasers grown by MBE and LPE have been studied by using DLTS technique, respectively. In the former, DLTS spectra detect deep levels,having larger capture cross-sections and concerntrations in AlGaAs graded layer and confining layer of lasers,in addition to the well-known DX center.These traps may spatially localize in the interface regions of discontinous variation Al mole fraction of n-Alx Ga1-x As layers with x from 0 to 0.40 and x=0.40.In the latter,DLTS spectra show that deep (hole,electron)traps disappear and the concentration of DX center is reduced in AlGaAs graded layer and confining layer of lasers. This fact shows that LPE buried heterostructure technique can annihilate or reduce the deep centers of InGaAs/GaAs strained layer quantum well lasers.

关 键 词：INGAAS 砷化镓 量子阱激光器 激光器 

分 类 号：TN248.4[电子电信—物理电子学]