可见光对GaN基紫外焦平面读出电路的影响  

Effect of Visible Light on Readout Integrated Circuit for GaN-based UV Focal Plane Array

作　　者：贾寒昕[1] 徐运华[1] 亢勇[1] 李向阳[1] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室

出　　处：《半导体光电》2006年第4期402-405,共4页Semiconductor Optoelectronics

摘　　要：GaN材料对可见光是透明的,而Si材料可以吸收可见光。在面阵GaN基紫外焦平面中,GaN探测器与Si读出电路通过铟柱倒焊互连,可见光可穿过GaN材料而被Si材料吸收。研究了可见光对于GaN基紫外焦平面读出电路影响的机制,并提出了通过在电路中覆盖铝层的方法减小可见光的影响,最后用实验证实了此方法对于抑制可见光干扰的影响的有效性。GaN is transparent to visible light,while visible light can be absorbed by Si. GaN detector arrays are hybridized to Si readout integrated circuit （ROIC） using flip-chip bonding techniques in which In bump bonds are employed. So visible light transmitted through GaN detector arrays can be absorbed by Si ROIC. The influence of visible light on GaN-based focal plane array ROIC is discussed. Finally, a method that Al layer is coated on ROIC to reduce tire influence of visible light is proposed, and the effectiveness for suppressing the disturbance of visible light is experimentally demonstrated.

关 键 词：焦平面 读出电路 紫外 可见光 GAN 

分 类 号：TN386.5[电子电信—物理电子学]