氨化磁控溅射Ga_2O_3／BN薄膜制备GaN纳米棒  

Preparation of GaN Nanorods through Ammoniating Ga_2O_3/BN Films Deposited by Magnetron Sputtering

作　　者：吴玉新[1] 薛成山[1] 庄惠照[1] 田德恒[1] 刘亦安[1] 孙莉莉[1] 王福学[1] 艾玉杰[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,山东济南250014

出　　处：《稀有金属材料与工程》2006年第A02期129-132,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金重大研究计划(90201025);国家自然科学基金资助项目(90301002)

摘　　要：利用射频磁控溅射技术在Si(111)衬底上制备Ga2O3／BN薄膜,在氨气中退火合成了大量的一维GaN纳米棒。用X射线衍射(XRD)、选区电子衍射(SAED)、傅立叶红外透射谱(FTIR)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)和光致发光谱(PL)对样品的晶体结构、元素成分、形貌特征和光学特性进行了分析。结果表明:GaN纳米棒为六方纤锌矿结构的单晶相,其直径在150 nm～400 nm左右,长度可达几十微米。室温下光致发光谱的测试发现了较强的372nm处的强紫外发光峰和420nm处的蓝色发光峰。Large-scale GaN nanorods were synthesized on Si（111） substrate through ammoniating Ga2O3/BN films deposited by radio frequency magnetron sputtering technology. The structure, elemental composition, morphology and optical properties of the as-synthesized samples were characterized by X-ray diffraction （XRD）, selected-area electron diffraction （SAED）, fourier transformed infrared spectrum （FTIR）, scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and photoluminescence spectrum （PL）. The results showed that the synthesized nanorods are hexagonal wurtzite GaN with diameters ranging from 150 to 400nm and lengths up to several tens of microns, photoluminescence spectra at room temperature showed a strong ultraviolet luminescence peak centered at 372nm and a blue luminescence peak centered at 420 nm.

关 键 词：磁控溅射 氨化 氮化镓纳米棒 光致发光 

分 类 号：TN304[电子电信—物理电子学]