低阈值高效率InAlGaAs量子阱808nm激光器  

InAlGaAs Quantum Well 808nm Laser Diode with Low Threshold Current and High Efficiency

作　　者：李建军[1] 韩军[1] 邓军[1] 邹德恕[1] 沈光地[1] 

机构地区：[1]北京工业大学北京光电子技术实验室,北京100022

出　　处：《中国激光》2006年第9期1159-1162,共4页Chinese Journal of Lasers

基　　金：北京市优秀人才培养专项经费(67002013200303);北京市人才强教计划--学术创新团队(05002015200504)资助项目

摘　　要：以Al0.3Ga0.7As/InAlGaAs/Al0.3Ga0.7As压应变量子阱代替传统的无应变量子阱作为有源区,实现降低808 nm半导体激光器的阈值电流,并提高器件的效率。首先优化设计了器件结构,并利用金属有机物化学气相淀积(MOCVD)进行了器件的外延生长。通过优化外延生长条件,保证了5.08 cm片内的量子阱(QW)光致发光(PL)光谱峰值波长均匀性达0.1%。对于条宽为50μm,腔长为750μm的器件,经镀膜后的阈值电流为81mA,斜率效率为1.22 W/A,功率转换效率达53.7%。变腔长实验得到器件的腔损耗仅为2 cm-1,内量子效率达90%。结果表明,压应变量子阱半导体激光器具有更优异的特性。In order to lower the threshold current and raise the efficiency of 808 nm laser diode, traditional no strain quantum well （QW） is replaced by Al0.3 Ga0.7 As/InA1GaAs/Al0. 3 Ga0.7 As compression strain QW as the active region. The device structure is optimized firstly, then the structure is grown by metal organic chemical vapor deposition （MOCVD）. By using the proper MOCVD epitaxial condition, the uniformity of the QW photoluminescence （PL） peak wavelength reaches 0.1%. For devices of 50 μm strip width and 750 μm cavity length after facet coating, the threshold current is as low as 81 mA, the slope efficiency is 1.22 W/A, and the wall-plug efficiency reaches 53.7%. By fitting the external quantum efficiency and the cavity length, a cavity loss of 2 cm 1 and internal quantum efficiency of 90%are obtained. All results show that the compression strain laser diodes have better characteristics.

关 键 词：激光器 InAlGaAs量子阱 金属有机物化学气相淀积 

分 类 号：TN248.4[电子电信—物理电子学]