改善AMR薄膜磁电阻传感器线性度的几种方法  

Several methods to improve the linearity of AMR sensors

作　　者：王立锦[1] 

机构地区：[1]北京科技大学材料科学与工程学院,北京100083

出　　处：《北京科技大学学报》2006年第8期744-749,共6页Journal of University of Science and Technology Beijing

基　　金：国家高技术研究"863计划"资助项目(No.2003AA325010)

摘　　要：在分析金属薄膜磁电阻传感器非线性产生原因的基础上,提出了几种设计AMR(各向异性磁电阻)薄膜磁电阻传感器时改善其线性度的方法.用直流磁控溅射方法制备了Ni80Fe20和Ni65Co35AMR薄膜材料;用微加工工艺制做出了几种AMR传感器元件,并给出了测试结果.Several methods to improve the linearity of anisotropic magnetoresistance （AMR） sensors were suggested based on the analysis of the generation of nonlinearity in magnetoresistive sensors of metallic films. Ni80Fe20 and Ni65Co35 AMR thin films were prepared by DC magnetic sputtering. Some AMR sensors were made by the micro-fabrication technique, and the testing results were also presented.

关 键 词：金属薄膜 各向异性磁电阻效应 传感器 线性度 微加工 

分 类 号：O484.42[理学—固体物理] TM271.2[理学—物理]