多晶硅薄膜晶体管器件退化机制研究进展  

On Degradation Models and Mechanisms in Poly-Silicon Thin Film Transistors

作　　者：薛敏[1] 王明湘[1] 

机构地区：[1]苏州大学电子信息学院微电子系,江苏苏州215021

出　　处：《电子器件》2006年第3期654-659,共6页Chinese Journal of Electron Devices

基　　金：国家自然科学基金资助(60406001)

摘　　要：结合近几年来国际上对于低温多晶硅薄膜晶体管器件可靠性开展的一些有代表性的研究工作,对其中几种常见的退化现象:自加热、热载流子和负偏置温度不稳定性做了分析和归纳,介绍了其退化机制及退化模型,并总结了它们在一般情况下对器件性能的影响及各自的典型应力条件。本文针对目前研究较多的自加热退化和热载流子退化机制做了更深入的探讨,比较了两者的差别,并介绍了它们在反转模式下出现的退化恢复现象。此外,文中还介绍了交流应力下的热载流子退化现象,以及在一些特殊器件结构中的退化现象。Several common degradation phenomena were summarized from some recent typical research work on the reliability of low-temperature processed poly-silicon thin film transistors, which includes self- heating, hot carriers and negative gate bias temperature instability. Degradation mechanisms and models are presented as well as conclusions of their influences on various device parameters and typical stress conditions. More detailed discussions on self-heating and hot carriers effects are made as well as comparisons between them. The recovery phenomena under reverse mode are also introduced. Moreover, hot carriers degradation under dynamic stress and degradation in some special structured devices are also presented.

关 键 词：低温多晶硅薄膜晶体管 可靠性 自加热退化 热载流子退化 

分 类 号：TN4[电子电信—微电子学与固体电子学] O47[理学—半导体物理]