一种带封装及ESD保护电路的低噪声放大器设计  

A Packaged and ESD Protected Low Noise Amplifier Design

作　　者：许永生[1] 陶永刚[1] 洪亮[1] 游淑珍[1] 李小进[1] 石春琦[1] 赖宗声[1] 

机构地区：[1]华东师范大学微电子电路与系统研究所,上海200062

出　　处：《电子器件》2006年第3期691-696,共6页Chinese Journal of Electron Devices

基　　金：上海市科委资助(No.037062010AM0308)

摘　　要：研究了封装以及ESD保护电路对低噪声放大器的性能影响。通过详尽推导电感负反馈共发射极低噪声放大器的输入阻抗、跨导、电压增益以及噪声系数的表达式,讨论并设计了一个应用于超高频接收芯片的低噪声放大器。芯片采用低成本的0.8μm BiCMOS工艺实现,封装形式为SOIC28。经过测量,所得到的参数与讨论及仿真值很好吻合,验证了设计以及优化方法的正确性。The effects of the package and ESD protection on the performance of the low noise amplifier are studied. By detailedly deriving the equations of the input impedance, transconductance, voltage gain and noise figure, an inductive degeneration common emitter low noise amplifier which is used in an ultra high frequency receiver chip is designed. The designed chip is implemented in a generic low cost 0. 8/lm BiCMOS process, and packaged in an SOIC28 package. The fact that the on-board measured results are very similar with the discussed and simulated results verifies the LNA design and optimization methodologies described in this paper.

关 键 词：封装效应 ESD保护 射频集成电路 低噪声放大器 

分 类 号：TN722.3[电子电信—电路与系统] TB42[一般工业技术]