低压下5×10^(-6)/℃的带隙基准电压源设计  

Design of 5×10^-6/℃ Bandgap Voltage Reference

作　　者：胡学忠[1] 贾新章[1] 肖本[1] 

机构地区：[1]西安电子科技大学微电子学院,西安710071

出　　处：《电子器件》2006年第3期766-769,共4页Chinese Journal of Electron Devices

摘　　要：为了减小高精度Pipeline/ADC中基准源的温漂特性,从而保证系统的整体性能,通过对传统一阶温度补偿电路进行改进,采用二阶温度系数补偿,获得了低于5×10-6/℃温度系数的基准电压源。整个电路采用成熟先进的Chrt0.35μmCMOS工艺,使用Hspice进行仿真。仿真结果证明此基准电压源的温度系数极低,平均温度系数低于5×10-6/℃。In order to reduce the temperature drift characteristics of the voltage reference, and furthermore develop the whole performance of the Pipline/ADC , we achieve a voltage reference with temperature coefficient lower than 5 ×10^-6/℃, by adopting the tempereature compensation of quadratic coefficient to imorove the traditional circuits with temperature compensation of one order. The total circuit which is simulated by Hspice is designed with the mature and advanced CMOS technics of Chrt0. 35 μm. The result of the simulation is shown that this kind of voltage reference has much lower temperature coefficient. The average value is smaller than 5×10^-6/℃.

关 键 词：带隙基准源 CMOS 温度补偿 10^-6/℃ 

分 类 号：TN432[电子电信—微电子学与固体电子学]