多量子阱中注入载流子的非均匀分布  

Non-Uniform Distribution of Injected Carriers in Multiple Quantum Wells

作　　者：施炜[1] 黄黎蓉[2] 段子刚[1] 冯玉春[1] 

机构地区：[1]深圳大学光电子学研究所光电子器件与系统教育部重点实验室,深圳518060 [2]华中科技大学光电子科学与工程学院,武汉430074

出　　处：《光子学报》2006年第9期1313-1316,共4页Acta Photonica Sinica

基　　金：深圳市科技计划项目(200515);广东省关键领域重点突破项目(No.2B2003A107);深圳大学省;部重点实验室开放基金资助

摘　　要：根据多量子阱中注入载流子的输运机制,计算了多量子阱中注入载流子的非均匀分布.引入不均匀度参量Asy来衡量载流子分布的不均匀程度,分析了各种敏感因素对载流子非均匀分布的影响.指出注入载流子分布的非均匀性,随量子阱数、注入电流、量子垒高度的增加而显著增加,随工作温度的升高而减小.Based on the injected carrier transportation mechanisms in multiple quantum wells （MQW）, non-uniform distribution of injected carriers in MQW was computed numerically. And several parameters, which significantly affect the carrier non-uniform distribution in MQW, were investigated. Results show that with the increase of the number of quantum wells, injected current and quantum barrier height increases the non-uniformity of carrier distribution in MQW,but with the decrease of working temperature it will also decrease.

关 键 词：半导体器件与技术 多量子阱 注入载流子 非均匀分布 

分 类 号：TN248.4[电子电信—物理电子学]