陶瓷衬底上薄膜电池的初步探索  

PRIMARY STUDY THIN FILM SOLAR CELL ON CERAMICS SUBSTRATE

作　　者：张宇翔[1] 许颖[2] 李海峰[3] 万之坚[3] 王文静[2] 

机构地区：[1]郑州大学物理工程学院,郑州450052 [2]北京市太阳能研究所,北京100083 [3]清华大学新型陶瓷与精细工艺国家重点实验室,北京100084

出　　处：《太阳能学报》2006年第9期910-914,共5页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(60276032)

摘　　要：采用快速热化学气相沉积方法在氧化铝和氮化铝陶瓷衬底上制备多晶硅薄膜及太阳电池。多晶硅薄膜的晶粒尺寸在经过区再结晶后增大且霍尔迁移率提高,但随后的薄膜生长发现薄膜出现裂纹,影响了电池的效率,在Al_2O_3衬底上得到196mV开路电压,1．93mA短路电流；在AIN衬底上得到310mV开路电压,5．31mA短路电流。Polysrystalline silicon thin film was deposited on Al2O3 and AIN ceramic substrates by RTCVD process. The ZMR （Zone Melting Recrystallinezation） process was used without any intermediated layer and overlay. The maximum grain size of the active silicon thin film is about one millimeter in width and a few millimeters in length after ZMR. The emitter layer was formed by means of a thermal diffusion process. Both n^＋ electrode in the center, and p ^＋ electrode on the edge were fabricated entirely on the front side. The Voc of solar cells based on Al2O3 and on AIN are 196mV and 310mV; Isc of solar cells based on Al2O3 and on AIN are 1.93mA and 5.3mA,respectively.

关 键 词：陶瓷 多晶硅薄膜 太阳电池 

分 类 号：TK514[动力工程及工程热物理—热能工程]