P型长波Hg_（1－x）Cd_xTe材料MBE生长技术研究  

A STUDY OF MBE TECHNOLOGY FOR P TYPE LONG WAVELENGTH Hg 1- x Cd x Te

作　　者：王善力[1] 杨建荣[1] 郭世平[1] 于梅芳[1] 陈新强[1] 方维政[1] 乔怡敏[1] 袁诗鑫[1] 何力[1] 张勤耀[2] 丁瑞军[2] 辛田玲[2] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室半导体薄膜材料研究中心 [2]中国科学院上海技术物理研究所

出　　处：《红外与毫米波学报》1996年第5期333-337,共5页Journal of Infrared and Millimeter Waves

基　　金：国家863高技术和中国科学院资助

摘　　要：用分子束外延的方法在ＧａＡｓ（２１１）Ｂ衬底上研制了Ｐ型长波ＨｇＣｄＴｅ材料，及３２×３２小规模长波混成红外焦平面列阵，其材料的均匀性以及生长材料的参数的可重复性良好．在适当的热处理条件下，材料Ｐ型电学参数达到了较高水平。The preliminary results on MBE growth of p type long wavelength HgCdTe on (211) B GaAs substrates and fabrication of small scale 32×32 long wavelength hybrid infrared focal plane arrays were described. Excellent material uniformity and good growth reproducibility of material parameters were obtained. Under an appropriate thermal annealing condition, some good results on electrical properties of p type HgCdTe were achieved,and they could be reproduced well.

关 键 词：分子束外延 P型 HGCDTE 

分 类 号：TN213[电子电信—物理电子学] TN304.055