Te溶剂垂直区熔法生长φ20MCT晶体组分控制研究  

A COMPOSITION STUDY ON φ20 MCT CRYSTAL GROWN BY VERTICAL ZONE-MELT METHOD WITH Te SOLVENT

作　　者：刘克岳[1] 郎维和[1] 王金义[1] 张学仁[1] 李美荣 常米[1] 赵宏[1] 

机构地区：[1]华北光电技术研究所

出　　处：《红外与激光工程》1996年第6期47-54,共8页Infrared and Laser Engineering

摘　　要：采用Ｔｅ作溶剂在特制的垂直区熔炉上开展了φ２０ＭＣＴ晶体的生长研究；详细阐述了该方法ＭＣＴ晶体的生长过程和生长机理；总结和分析了晶体生长过程中影响组分的因素；提出了生长过程中组分控制存在的问题和改善组分控制的措施。通过该研究，优化了生长条件，采取了适当的温度分布（窄的高温区、大的温度梯度）和降低液区高度等有效措施，获得了φ２０、轴向组分波动小（长波段可利用率高达７０％）、径向组分均匀（△ｘ＝±０．００１５）的ＭＣＴ晶体，并利用此材料作出了一系列性能良好的多元光导、光伏红外探测器件。?0 MCT crystal has been grown in self-made vertical zone-melt apparatus with Te as solvent. In this paper, it is made a systematic exposition of the process and mechanism on MCT crystal growth, analyzed the influencial factors on the crytstal compostion, summerized the existing problems, and presented the measures for improving the homogeneity of the crystal. The growth environment has been optimized by adopting suitable temperature distribution (narrow high temperature zone as well as great temperature gradient) and lowering the height of the liquid zone, etc.. φ20 MCT crytstal has been achieved with the composition distribution that is regular in langitudinal direction (the utilization ratio is up to 70) and is homogeneous in radial direction (△x = ± 0. 0015), from which a series of well-petformanced multi-element infrared detectors have been made.

关 键 词：HGCDTE 晶体生长 熔体生长 均匀性 红外材料 

分 类 号：TN213.05[电子电信—物理电子学]