宽带硅衬底RF片上螺旋电感物理模型  

Wide-Band Physical Model for RF Spiral Inductors on Silicon

作　　者：任军[1] 杨帆[1] 郑薇[1] 尤焕成[1] 王向展[1] 李立萍[1] 杨谟华[1] 

机构地区：[1]电子科技大学,四川成都610054

出　　处：《电子学报》2006年第8期1517-1521,共5页Acta Electronica Sinica

摘　　要：针对高损耗硅衬底,源自部分元等效电路方法考虑了趋肤效应和邻近效应对螺旋电感中串联电感Ls、串联电阻Rs频率特性的制约,并基于全耦合变压器模型计入了复杂的衬底涡流损耗,从而建立了一种新的片上螺旋电感物理模型.通过与全波分析方法对比,验证了在20GHz范围内由该模型导出的等效电感Leff、等效电阻Reff和Q值误差仅在7%以内.该模型可望用于硅基射频集成电路中电感进一步的理论探讨和优化设计.For monolithic RF spiral inductor on high-loss silicon suhstrate, a novel physical model is proposed, in which functions of both skin effect and proximity effect to frequency-dependent series parameters L, and R, are accounted in the light of modified partial equivalent element circuit methodology and, in the meanwhile, complicated eddy current losses in the substrate are captured by a full-coupled transformer loop. Up to 20GHz,the model reveals quite good accuracy within 7% with data from full-wave electromagnetic filed simulator,including equivalent inductor Leff,resistor Reff and quality factor Q and,hopefully,it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.

关 键 词：片上螺旋电感 物理模型 趋肤效应 邻近效应 衬底涡流损耗 

分 类 号：TN454[电子电信—微电子学与固体电子学]