大功率GaAs FET偏置电路设计中的有关问题  

Some Consideratios in Design of High-Power GaAs FET Bias Circuit

作　　者：杨斐[1] 

机构地区：[1]西安电子工程研究所,西安710100

出　　处：《火控雷达技术》2006年第3期71-73,77,共4页Fire Control Radar Technology

摘　　要：现代雷达的发展方向是多功能化、小型化,固态发射机以工作寿命长、可靠性高、体积小等优点被广泛使用。本文主要总结了固态发射机设计中部分大功率G aA s FET偏置电路的设计经验。Multi-function and miniaturization has become development trend of modern radar, and solid-state transmitter is widely used in this radar because of its advantages such as long lifetime, high reliability and small size. This paper aims to summarize experience in design of high power GaAs FET bias circuit used in solid-state transmitter.

关 键 词：雷达 发射机 电路 GAAS FET 

分 类 号：TN834[电子电信—信息与通信工程] TN836