半导体器件辐射效应及抗辐射加固  

Radiation Effect and Reinforce of Radiation Resistance for Semiconductor Device

作　　者：李致远 

机构地区：[1]西安卫光半导体有限公司,陕西西安710065

出　　处：《现代电子技术》2006年第19期138-141,共4页Modern Electronics Technique

摘　　要：随着空间技术、核技术和战略武器技术的发展,各种电子设备已经广泛用于人造卫星、宇宙飞船、运载火箭、远程导弹和核武器控制系统中。构成电子设备的电子元器件不可避免地要处于空间辐射和核辐射等强辐射应用环境之中,辐射作用会对元器件性能造成不同程度的破坏,进而使整个电子设备发生故障。介绍了微电子器件应用中可能遇到的两类辐射环境,着重分析了辐射对半导体材料与器件的作用机理和不同类型器件的辐射诱生失效模式,分别介绍了对双极型器件和MOS器件进行辐射加固的主要方法。Along with space technology, nuclear technology and stratagem weapon technology development, most of electronic equipments are widely used to control system for satellite, universe airship and carrier rocket. Electronic device on these equipments working in radiation environment. They have to suffer strong radiation such like space radiation and nuclear radiation, some degree characteristic can be destroied by radiation, then, lead equipments breakdown. The text introduces two possible radiation environment during micro - electronic device application, analyzes the effect mechanism of radiate infection for semiconductor material and the failure mode of radiation infection for different type device. Introduces the reinforce method to resist radiation for bipolar device and MOS device.

关 键 词：双极型器件 MOS器件 辐射效应 辐射加固 

分 类 号：TN32[电子电信—物理电子学]