激光在集成电路纳米超浅结形成中的应用综述  

Study of laser application in the formation of nano-scale ultra-shallow junctions of integrated circuits

作　　者：王光伟[1] 宋延民[1] 张建民[1] 郑宏兴[1] 

机构地区：[1]天津工程师范学院电子工程系,天津300222

出　　处：《天津工程师范学院学报》2006年第3期19-23,共5页Journal of Tianji University of Technology and Education

基　　金：天津市高校科技发展基金(JW20051201)

摘　　要：综述了近年来激光在集成电路纳米超浅结形成中的应用。指出了现有的广泛用于集成电路结形成的离子注入加快热退火技术,不能适应纳米超浅源、漏结的制备及其原因,分析了激光的独特优点以及用于超浅结形成的可行性。纳米超浅结要求结深和杂质分布精确可控,结电阻要尽可能低。着重强调了激光能量密度、脉冲宽度、作用时间等工艺参数与结深、杂质分布以及结电阻之间的密切关联。The application of laser in the formation of nano-scale uhra-shallow junctions of integrated circuits has been briefly summarized. It is indicated that the current technique of ion implantation with rapid thermal annealing widely used in the junction fabrication of integrated circuits will not meet the requirement of the formation of nano-scale ultra-shallow source or drain junctions and its reason. And the unique virtue of laser and its feasibility of being adopted in the formation of nano-scale ultra-shallow junctions are analyzed. Nano-scale ultra-shallow junctions demand that the junction depth and dopant distribution should be accurately controllable and the junction resistance should be as low as possible. The close correlations between laser energy density, pulse duration, interaction time and junction depth, dopant distribution as well as junction resistance are mainly emphasized in this paper.

关 键 词：激光退火 激光掺杂 集成电路 纳米尺度 超浅结 

分 类 号：TN305.3[电子电信—物理电子学] TN305.4