微纳级双极晶体管的热耗散研究  

Hot Dissipation Research of Micronano Level

作　　者：侯志刚[1] 李惠军[1] 许新新[1] 

机构地区：[1]山东大学孟尧微电子研发中心,济南250100

出　　处：《微纳电子技术》2006年第10期461-463,475,共4页Micronanoelectronic Technology

摘　　要：对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。基于热电流方程、泊松方程及电流密度方程,在二维器件仿真环境下,进行了微纳级小尺寸npn双极性晶体管热现象的器件物理特性分析。重点研究了器件的集电极电流IC与晶格温度T的因变关系。研究结果显示,随着IC的增加,器件的晶格温度逐渐升高,VCE保持在3.0V、VBE达到最大值0.735V时,随器件晶格温度的升高VBE将减小。最后,笔者给出了描述晶体管温变关系的三维曲线。Bipolar junction transistor （BJT） has the self-heating phenomena, which seriously af- fects the properties of transistor. Based on the thermal flow equation, Poisson＇s equation and current density equation, the thermal phenomena of Micronano level small-dimension BJTs was analyzed using the 2-D simulated software. A plot of Ic vs. T is given. The simulation results show that the temperature will increase as the collector current increases. While holding the collector- emitter voltage constant at 3.0 V, the base-emitter voltage reaches maximum value about 0.735 V and then starts to decrease. Finally, the 3-D temperature distribution of BJT was plotted.

关 键 词：超深亚微米 微纳级 双极性器件 热现象 集成电路 

分 类 号：TN431[电子电信—微电子学与固体电子学] TN321